Sapphire (Al2O3) single crystal is an excellent multifunctional material. It has high-temperature resistance, good heat conduction, high hardness, infrared transmission, and good chemical stability. It is widely used in many fields of industry, national defense, and scientific research (such as high temperature resistant infrared windows, etc.). At the same time, it is also a widely used single-crystal substrate material. It is the preferred substrate for blue, purple, and white light-emitting diodes (LED) and blue laser (LD) industries (gallium nitride film needs to be epitaxy on the sapphire substrate first). It is also an important superconducting film substrate.
| Crystal Materials | 99,996% of Al2O3, High Purity, Monocrystalline, Al2O3 | |||
| Crystal quality | Inclusions, block marks, twins, Color, micro-bubbles and dispersal centers are non-existent | |||
| Diameter | 2inch | 3inch | 4inch | 5inch ～ 7inch |
| 50.8± 0.1mm | 76.2±0.2mm | 100±0.3mm | In accordance with the provisions of standard production | |
| Thickness | 430±15µm | 550±15µm | 650±20µm | Can be customized by customer |
| Orientation | C- plane (0001) to M-plane (1-100) or A-plane(1 1-2 0) 0.2±0.1° /0.3±0.1°, R-plane (1-1 0 2), A-plane (1 1-2 0 ), M-plane(1-1 0 0), Any Orientation , Any angle | |||
| Primary flat length | 16.0±1mm | 22.0±1.0mm | 32.5±1.5 mm | In accordance with the provisions of standard production |
| Primary flat Orientation | A-plane (1 1-2 0 ) ± 0.2° | |||
| TTV | ≤10µm | ≤15µm | ≤20µm | ≤30µm |
| LTV | ≤10µm | ≤15µm | ≤20µm | ≤30µm |
| TIR | ≤10µm | ≤15µm | ≤20µm | ≤30µm |
| BOW | ≤10µm | ≤15µm | ≤20µm | ≤30µm |
| Warp | ≤10µm | ≤15µm | ≤20µm | ≤30µm |
| Front Surface | Epi-Polished (Ra< 0.2nm) | |||
| Back Surface | Fine ground (Ra=0.5 to 1.2 µm), Epi-Polished (Ra< 0.2nm) | |||
| Note | Can provide high-quality sapphire substrate wafer according to customers' specific requirement | |||
Sapphire Wafer
